savantic semiconductor product specification silicon pnp power transistors bd646/648/650/652 description with to-220c package complement to type bd645/647/649/651 darlington applications for use in output stages in audio equipment ,general amplifier,and analogue switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit bd646 -80 bd648 -100 BD650 -120 v cbo collector-base voltage bd652 open emitter -140 v bd646 -60 bd648 -80 BD650 -100 v ceo collector-emitter voltage bd652 open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current-dc -8 a i cm collector current-pulse -12 a i b base current -150 ma p c collector power dissipation t c =25 62.5 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon pnp power transistors bd646/648/650/652 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bd646 -60 bd648 -80 BD650 -100 v (br)ceo collector-emitter breakdown voltage bd652 i c =-30ma, i b =0 -120 v v cesat-1 collector-emitter saturation voltage i c =-3a ,i b =-12ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-5a ,i b =-50ma -2.5 v v besat base-emitter saturation voltage i c =-5a ,i b =-50ma -3.0 v v be base-emitter on voltage i c =-3a ; v ce =-3v -2.5 v bd646 v cb =-60v, i e =0 v cb =-40v, i e =0 ;t c =150 -0.2 -2.0 bd648 v cb =-80v, i e =0 v cb =-50v, i e =0 ;t c =150 -0.2 -2.0 BD650 v cb =-100v, i e =0 v cb =-60v, i e =0 ;t c =150 -0.2 -2.0 i cbo collector cut-off current bd652 v cb =-120v, i e =0 v cb =-70v, i e =0 ;t c =150 -0.2 -2.0 ma bd646 v ce =-30v, i b =0 bd648 v ce =-40v, i b =0 BD650 v ce =-50v, i b =0 i ceo collector cut-off current bd652 v ce =-60v, i b =0 -0.5 ma i ebo emitter cut-off current v eb =-5v; i c =0 -5 ma h fe dc current gain i c =-3a ; v ce =-3v 750 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.0 /w
savantic semiconductor product specification 3 silicon pnp power transistors bd646/648/650/652 package outline fig.2 outline dimensions
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